Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

Masayuki Yoshida; Satoru Matsumoto; Shuji Tanaka

doi:10.62721/diffusion-fundamentals.16.636

Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

Authors

Masayuki Yoshida
Satoru Matsumoto
Shuji Tanaka

DOI:

https://doi.org/10.62721/diffusion-fundamentals.16.636

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Published

2011-12-01

How to Cite

[1]

M. Yoshida, S. Matsumoto, and S. Tanaka, “Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon”, diffus. fundam., vol. 16, Dec. 2011.

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Issue

Vol. 16 (2011): Special Issue “Diffusion Fundamentals IV”

Section

Extended Abstracts

URN

http://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa-185496