Limits of the ratios of tracer diffusivities for the vacancy-pair mechanism with application to compound semi-conductors

Irina V. Belova; David Shaw; Graeme E. Murch

doi:10.62721/diffusion-fundamentals.11.496

Limits of the ratios of tracer diffusivities for the vacancy-pair mechanism with application to compound semi-conductors

Authors

Irina V. Belova
David Shaw
Graeme E. Murch

DOI:

https://doi.org/10.62721/diffusion-fundamentals.11.496

Downloads

Published

2009-12-31

How to Cite

[1]

I. V. Belova, D. Shaw, and G. E. Murch, “Limits of the ratios of tracer diffusivities for the vacancy-pair mechanism with application to compound semi-conductors”, diffus. fundam., vol. 11, Dec. 2009, doi: 10.62721/diffusion-fundamentals.11.496.

ACM
ACS
APA
ABNT
Chicago
Harvard
IEEE
MLA
Turabian
Vancouver

Download Citation

Endnote/Zotero/Mendeley (RIS)
BibTeX

Issue

Vol. 11 (2009): Special Issue “Diffusion Fundamentals III”

Section

Extended Abstracts

URN

http://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa-190042