Formation mechanism of plateau, rapid fall and tail in phosphorus diffusion profile in silicon based on the pair diffusion models of vacancy mechanism and interstitial mechanism

Authors

  • Masayuki Yoshida
  • Masami Morooka
  • Shuji Tanaka
  • Manabu Takahashi

DOI:

https://doi.org/10.62721/diffusion-fundamentals.2.248

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Published

2005-09-25

How to Cite

[1]
M. Yoshida, M. Morooka, S. Tanaka, and M. Takahashi, “Formation mechanism of plateau, rapid fall and tail in phosphorus diffusion profile in silicon based on the pair diffusion models of vacancy mechanism and interstitial mechanism”, diffus. fundam., vol. 2, Sep. 2005, doi: 10.62721/diffusion-fundamentals.2.248.

Issue

Vol. 2 (2005): Special Issue "Diffusion Fundamentals I", First Part

Section

Extended Abstracts

URN

http://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa-196177