Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

Sergey A. Kukushkin; Andrey V. Osipov

doi:10.62721/diffusion-fundamentals.30.1003

Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

Authors

Sergey A. Kukushkin
Andrey V. Osipov

DOI:

https://doi.org/10.62721/diffusion-fundamentals.30.1003

Keywords:

pressure dependence, silicon substrate, silicon carbide

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Published

2017-12-01

How to Cite

[1]

S. A. Kukushkin and A. V. Osipov, “Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate”, diffus. fundam., vol. 30, Dec. 2017, doi: 10.62721/diffusion-fundamentals.30.1003.

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Issue

Vol. 30 (2017): Special Issue "Diffusion Fundamentals VII"

Section

Extended Abstracts

URN

http://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa2-317451

License

This work is licensed under a Creative Commons Attribution 4.0 International License.